, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 NDP605A/ndp605b, ndp606a/ndp606b n-channel enhancement mode power field effect transistor general description these n-channel enhancement mode power field effect transistors are produced using national's proprietary, high cell density, dmos technology. this very high density pro- cess has been especially tailored to minimize on-state re- sistance, provide superior switching performance, and with- stand high energy pulses in the avalanche and commutation modes. these devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power loss, and re- sistance id transients are needed. features ? 48 and 42 amp, 50v and 60v, ros(on) - 0.025j1 and 0.028ft ? critical dc electrical parameters specified at elevated temperature ? rugged internal source-drain diode eliminates the need for external zener diode transient suppressor ? 175*c maximum junction temperature rating ? easily paralleled for higher current applications ? high density cell design (3 million/in?) for extremely low lower rrjs(on) temperature coefficient os to-220ab absolute maximum ratings symbol vdss vdgr vgss id pd tj.tstg tl parameter drain-source voltage drain-gate voltage (rgs - 1 mj1) gate-source voltage? continuous ? non repetitive (tp < 50 jis) drain current? continuous ?pulsed total power dissipation ? tc = 25*c derate above 25*c operating and storage temperature range maximum lead temperature for soldering purposes, 1/e" from case for 5 sec. ndp606a NDP605A 60 so 60 50 ndp606b 60 60 ndp605b 50 so 20 40 48 144 42 126 100 0.67 -65 to 175 275 units v v v a w wrc ?c ?c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
electrical characteristics tc > 2s?c unless otherwise noted symbol parameter teat conditions type mln typ mm units off characteristics bvdss loss igssf isssr drain-source breakdown voltage zero gate voltage drain current gate-body leakage, forward gale-body leakage, reverse vqs - 0v, id - 250 /j,a vds - rated voltage, vqs = 0v, tj = 25-c vds - rated voltage, vqs-ov.tj- 125-c vgs - zov vqs - -20v on characteristics vqsfth) rds(on) 9fs gate threshold voltage static drain-source on-resistance forward transconductance vds - vgs id = 250 pa tj = 25'c vqs - 10v tj ?= 125'c vqa - 10v ndp60sa ndp605b ndp606a ndp606b all all all all 50 60 250 1.0 100 -100 v v ma ma na na tj = 26'c tj - 125'c id - 24a id = 21a id - 24a id - 21a vgs =?= 10v. id - o-5 rated id all NDP605A ndp606a ndp605b ndp606b NDP605A ndp606a ndp605b ndpg06b all 2.0 1.4 10 0.020 0.030 18 4,0 3.6 0.025 0.02b 0.038 0.048 v v n n n n mhos dynamic characteristics ci? ctss coss input capacitance reverse transfer capacitance output capacitance vgs -ov, vds f = 1 uhz = 25v all all all 1375 300 620 1800 400 800 pf pf pf switching characteristics ttxon) v 'dj?l tf qq cos qsd turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate- drain charge vod- 25v, id -0.5 rated id, rgen - 7.5n vgs - iov vds - 0.8 rated vdss. id = rated id, vgg = 10v all all all all all all all 16 80 30 55 60 6 32 30 120 60 100 ns ns ns ns nc nc nc
electrical characteristics tc - 2s-c unless otherwise noted (continued) symbol parameter i teat condition* i type | mln | typ | max | unit* source-drain diode characteristics maximum continuous source current NDP605A ndp606a nop605b ndp606b 48 42 >sm maximum pulsed source current NDP605A ndp606a 144 ndp605b ndp606b 126 vsd diode forward voltage ls - 0.5 bated is vqs - 0v '25'c all 1.3 125'c all 1.2 reverse recovery time reverse recovery current vqs - 0v, ls - 0.5 rated ls dte/dt = 100 a/ms all 85 all 4.8 thermal characteristics thermal resistance, junction to case 1.50 ?c/w roja thermal resistance, junction to ambient 62.5 ?c/w typical electrical characteristics 0 0,2 0.4 0,6 0.8 1 1.2 1.4 1,6 1.8 2 vds, drain-source voltage (v) tl/g/11112-3 figure i. on-reglon characteristic* s o.a 0.6 s \ s v d-3 \i 50 *x v s fa \0 -25 0 25 50 75 100 125 150 175 tj. junction temperature |
